| 摘要 |
PURPOSE:To obtain a diode having the same punch-through voltage in two directions by forming two stacked layers of a high resistance layer and a low-resistance layer having the same conductive type as the substrate on a low-resistance semiconductor substrate of the one-conductive type, providing a reverse conductive type layer, and diffusing and forming a one-conductive type region therein. CONSTITUTION:An N<-> type layer 7 is epitaxially grown on an N<+> type semiconductor substrate 6, and an N<+> type layer 8, wherein Sb is doped in consideration of a diffusing factor, is layered and grown on the N<-> type layer 7. Then, a P<-> type layer 9 is likewise grown thereon, all the surface is covered by an oxide film 11, and a window is provided. An N<+> type region 10, wherein Sb is likewise used as impurities, is diffused and formed, and an electrode 12 is deposited thereon. In this constitution of the diode, surge withstanding voltage becomes good owing to the resistance of the layer 7 when a voltage is applied on said diode and the punch through is generated, the depletion layer spreads only in the layer 9 owing to the presence of the layer 8, and the punch-through voltages in the two directions become approximately the same. |
