Electronically-erasable programmable read-only memory - has selection transistor in semiconductor substrate between 2 memory transistors

摘要

The memory has a pair of memory transistors (43, 44) provided in the surface of a semiconductor substrate (20) so that they are spaced by an intermediate zone, each transistor (43, 44) having a floating gate (14a, 14b) for storing information charges and a control gate (7a, 7b) for controlling the floating gate (14a, 14b). The intermediate zone contains a selection transistor (3) for the 2 memory transistors (43, 44). Pref. the selection transistor (3) has a gate electrode (4) part of which overlaps the 2 memory transistors (43, 44) via an intermediate insulation film (47) extending over the control gate (7a, 7b) of each memory transistor (43, 44). ADVANTAGE - Allows high density integration.