| 摘要 |
PURPOSE:To obtain a close contact line sensor which has high performance, sufficient reliability and low cost by forming all elements including transistors of thin films. CONSTITUTION:A switching transistor and a photosensitive cell are formed with a source 34, a channel 33 and a drain 32 by depositing a polycrystalline silicon thin film on a substrate 31 and patterning it. A gate insulating film 35 and a gate 36 are formed, and P type or N type is formed as source and drain electrodes 32, 33 by an ion implanting method. A silicon oxidized film 41 is formed as an interlayer insulating film, contacting holes 37, 43 are opened, and an aluminum wiring layer to become an output line and an aluminum layer 39 of the lower electrode of the photosensitive layer are formed. A photosensitive layer 40 such as amorphous silicon and a transparent electrode layer 42 to become the upper electrode are formed. |
