INTEGRIERTE HALBLEITERSCHALTUNG MIT EINEM MAGNETFELDSENSOR AUS HALBLEITERMATERIAL.

摘要

In a design variant, the device comprises a magnetic field sensor (1), a voltage/current converter (2) which supplies the magnetic field sensor (1) with a supply current (i), an amplifier (3) connected in cascade to the output of the magnetic field sensor (1) and a converter (4) which is connected to the output of the amplifier (3) and which is an analog/digital converter or a voltage/frequency converter. The amplifier (3) is a correcting network whose transfer ratio in the design variants is proportional to one of the factors (1 + delta n/n) or (1 - delta n/n). The amplifier (3) comprises an inverting amplifier made up of an operational amplifier, a feedback resistor and an input resistor. Its gain is proportional to the ratio of the resistance values of the two resistors which are diffused into a semiconductor material of the same conductivity type as that of the magnetic field sensor (1). The two resistors are close to the magnetic field sensor (1), are symmetrical with respect to it and have approximately the same dimensions as it. At the same time, n, the charge carrier concentration in the semiconductor material, and delta n, the change in said charge carrier concentration (n) with time in one of the two resistors, is preferably equal to the charge carrier concentration (n) in the magnetic field sensor (1), and the charge carrier concentration in the other resistor is equal to a multiple of the charge carrier concentration (n) in the magnetic field sensor (1). ……