| 摘要 |
PURPOSE:To obtain a complementary MOSFET which has less leakage current due to defect and can be microminiaturized by implanting special amounts of BF2 ions and <31>P ions on respective source drain regions and annealing it at low temperature for a short time. CONSTITUTION:After a well, field film, a gate film and polysilicon gate electrode are formed, BF2 ions are implanted in 1X10<15>cm<-2> are more on the source drain region of P type MOSFET, <31>P ions are implanted in 1X10<15>cm<-2> on the source and drain regions of N type MOSFET, heat treated at low temperature for a short time by a halogen lamp or a graphite heater, thereby performing crystallization recovery and activation of ion implanted layers. The ion implanted layer formed in amorphous state by BF2, <31>P ions can be annealed at low temperature of 900 deg.C or lower for a short time within one minute, and the leakage current of diffusion bond can be reduced. |
