| 摘要 |
PURPOSE:To obtain a three-dimensional LSI with a positive connection by interposing an inter-layer insulating film between an upper layer and a lower layer with circuit elements, boring a through-hole to the upper layer and the inter-layer insulating film, inserting a vertical type wiring into the through-hole and connecting the elements of the upper layer and the lower layer by the wiring while surrounding the wiring of an upper-layer penetrating section by an insulating film when ICs are formed in laminated structure. CONSTITUTION:When an Si substrate 1 as a lower layer to which source-drain regions 3 are formed and an Si substrate with the same structure as said substrate 1 are superposed, an inter-layer insulating film 5 is interposed between both substrates. A bored section 6 penetrating an upper layer and the insulating film 5 is bored, a vertical wiring 9 is inserted into the bored section, and the lower end section of the wiring 9 is brought into contact with the surface of the regions 3. An insulating film 10 surrounding the wiring 9 is shaped to the penetrating section of the upper layer of the upper section of the wiring 9 to previously interrupt a contact with the upper layer, and the upper end of the wiring 9 and a region formed to the upper layer are connected by a wiring 11 in Al, etc. Accordingly, the wiring of the upper and lower layers is connected positively. |
