Cleaning agents used during the fabrication of integrated circuits and associated process.

摘要

This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process comprises contacting the surface to be cleaned with an effective amount of a cleaning agent comprising a carboxylic acid selected from acetic acid or formic acid at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surface of the substrate providing a clean, substantially residue-free surface.