发明名称 |
Method of producing semiconductor substrate. |
摘要 |
<p>A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substrate to the surface of the epitaxial layer of single-crystal silicon by using an adhesive; selectively etching the porous single-crystal silicon substrate; sticking the epitaxial layer fast to a transparent insulating substrate containing SiO<6> as a main constituent; separating the supporting layer from the epitaxial layer by removing the adhesive; and heat-treating the epitaxial layer stuck fast on the transparent insulating layer. Alternatively, a porous layer is formed in a surface portion of a single-crystal silicon substrate, and then, the non-porous portion is removed before the porous layer is selectively etched. <IMAGE></p> |
申请公布号 |
EP0536788(A1) |
申请公布日期 |
1993.04.14 |
申请号 |
EP19920117326 |
申请日期 |
1992.10.09 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YAMAGATA, KENJI;YONEHARA, TAKAO |
分类号 |
H01L21/02;H01L21/20;H01L21/306;H01L21/762;H01L27/12;H01L31/18 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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