| 摘要 |
<p>In order to decompose TiCP<8> to Ti and CP completely, extremely high energy of more than 400kcaP moP DIVIDED <1> is required. In the method according to the present invention, use of unequilibrium plasma under reduced pressure is noticed, and it is especially noticed that in the plasma generated by resonance phenomenon, there are high energy electrons, which collide and enhance decomposition and reduction. Therefore, itis possible to form a Ti film without such high substrate temperature as 2000 DEG C, and more, to form a Tifilm with good step coverage even in a fine contact hole. <IMAGE></p> |
