| 摘要 |
A method of forming electrodes on diamond comprising the steps of forming a mask pattern on diamond (as a crystal) or diamond film deposited by CVD (Fig 1b); performing a treatment of the diamond surface by a plasma of chemically inert gases; forming an electrode film on the whole surface of the specimen (Fig 1c); and removing the mask, thereby forming a specified pattern on the electrodes (Fig 1d). This treatment of the diamond provides electrodes for electronic devices (eg heat sinks, diodes, transistors) having high adhesion to diamond and diamond film The electrode pattern may be formed by a photolithography technique and may comprise a pattern of Au/Ti. The chemically inert gas may be He, Ne, Av, Kv, Xe or N2. During the plasma processing a bias voltage (DC or AC) may be applied to the sample holder to enhance the cleaning effect. In an example the chamber is evacuated to approximately 10<-6> Torr and the inert gas is supplied at a flow rate of 10cc/min at a gas pressure of 2m Torr. After the step of forming the electrode the composite material may be heat treated. <IMAGE> |
