发明名称 |
Elimination of heterojunction band discontinuities. |
摘要 |
<p>Conduction band or valence band discontinuities occurring at the junction of two unipolar heterogeneous semiconductors can be eliminated by compositional grading of the heterointerface and appropriate doping of the interfacial region. The compositional potential of a graded junction and an interface dipole potential generated by modulation doping of the interfacial region art selected such that they exactly compensate each other. The compositional grading of the interface is achieved by semiparabolic grading of narrow regions immediately adjacent each side of the interface. The modulation doping is achieved by doping the two materials with suitable dopants, donors for the conductance band or acceptors for the valence band, depending on the polarity of the structure. This reduces the resistance in periodic semiconductor multilayer structures leading to low-resistance distributed Bragg reflectors. <IMAGE></p> |
申请公布号 |
EP0536944(A2) |
申请公布日期 |
1993.04.14 |
申请号 |
EP19920308943 |
申请日期 |
1992.10.01 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
SCHUBERT, ERDMANN FREDERICK;TU, LI-WEI;ZYDZIK, GEORGE JOHN |
分类号 |
H01S5/042;H01L33/00;H01S5/00;H01S5/183;H01S5/30 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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