| 摘要 |
A thin-film transistor basically comprises an insulating substrate, a gate electrode formed on the substrate, a gate insulating layer covering the gate electrode, a semiconductor layer formed on the gate insulating layer, and source/drain electrodes electrically connected to the semiconductor layer. An insulating layer is interposed between the source/drain electrodes and the semiconductor layer, and the source/drain electrodes are electrically connected to the semiconductor layer through a pair of openings provided in the insulating layer. The connection to the semiconductor layer is made directly or via an electrical connection member.
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