SEMICONDUCTOR MEMORY DEVICE HAVING SIGNAL RECEIVING FACILITY FABRICATED FROM BI-CMOS CIRCUITS,申请号US19910673998-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY DEVICE HAVING SIGNAL RECEIVING FACILITY FABRICATED FROM BI-CMOS CIRCUITS
摘要
申请公布号	US5202823(A)	申请公布日期	1993.04.13
申请号	US19910673998	申请日期	1991.03.25
申请人	NEC CORPORATION	发明人	SHIMOGAWA, KENJYU
分类号	G11C5/14;G11C11/415;G11C11/418	主分类号	G11C5/14
代理机构		代理人
主权项
地址

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