发明名称 |
Alternating cyclic pressure modulation process for selective area deposition |
摘要 |
A novel process for the selective deposition of solid-phase materials is disclosed, which process requires only the modulation of a single auxiliary gas within a suitable reactor assembly. According to the disclosed method, selective area deposition can be obtained on any desired microelectronic substrate by the creation of a vapor-phase chemical equilibrium system capable of deposition and etching the material to be deposited. The vapor-phase system is designed around a single reversible reaction wherein the material to be deposited equilibrates between that solid phase and its vapor-phase constituent species. By modulating an auxiliary gas flow into the reactor assembly, alternating deposition and etching processes can be obtained to yield an overall process which results in net overall selective and uniform deposition.
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申请公布号 |
US5201995(A) |
申请公布日期 |
1993.04.13 |
申请号 |
US19920852411 |
申请日期 |
1992.03.16 |
申请人 |
MCNC |
发明人 |
REISMAN, ARNOLD;TEMPLE, DOROTA |
分类号 |
C23C16/04;C23C16/455;H01L21/20;H01L21/285;H01L21/3065;H01L21/768 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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