| 摘要 |
PCT No. PCT/JP90/01295 Sec. 371 Date May 21, 1991 Sec. 102(e) Date May 21, 1991 PCT Filed Oct. 5, 1990 PCT Pub. No. WO91/05372 PCT Pub. Date Apr. 18, 1991.A semiconductor layer made of an epitaxial growing layer (16) is formed on the surface of a p--type silicon semiconductor substrate (11), first impurity regions are formed by p+-type buried regions (171, 172) and a p-type impurity regions (221, 222) throughout the semiconductor layer from its surface to the semiconductor substrate so as to divide said semiconductor layer into side element regions (161, 162) and a central island region (163). An anode layer obtained by alternately arranging n+-type impurity regions (251 to 253) and p+-type impurity regions (231, 232) is formed in surface regions of the pair of impurity regions, and cathode regions made of p-type impurity regions (231, 232) are formed in the element regions of the semiconductor layer. Gate electrodes are formed to be opposite to each other through a gate insulating film in p-n junction portions constituted by the n+-type impurity regions (251, 252) the p-type impurity regions (221, 222), and an n--type element region which are exposed on the surface of the substrate, thereby constituting a pair of MOS thyristors made of a p-n-p-n junction arranged in a lateral direction.
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