| 摘要 |
A method of manufacturing a semiconductor device comprising a lead frame (2A-2I) and a semiconductor crystal (3) provided on one of the conductors (2C) and comprising at least one semiconductor switching element, and electrically conducting connections (4A-4I) from the crystal (3) to the conductors (2). The conductors (2) are stamped from a metal strip, after which the tag tips (2a) are coined between a coining die (8) and an anvil (6) to remove irregularities. After that, the conducting connections (4A-4I) are secured to the tag tips (2a) by ultrasonic welding. According to the invention, the anvil surface (5A) and the die surface (7) parallel thereto enclose a downward angle ( alpha ) with the adjoining portion (5B) of the anvil surface, which angle is preferably at least 0,5<o> and at most 5<o>. The invention also relates to a device for carrying out the method, comprising an anvil (6) and a coining die (8), the anvil surface (5) comprising two adjoining flat portions (5A, 5B) which form an obtuse angle ( beta ) of preferably at least 175<o> and at most 179,5<o> enclosing the anvil material (6), the die surface (7) of the coining die (8) being practically parallel to one of these portions (5A). <IMAGE> |
