| 摘要 |
PURPOSE:To make it possible to provide the difference of 0.15eV or higher in Eg, by polycrystallizing a semiconductor by annealing by high-intensity light projection or accelerating the crystallization degree, and providing the second P-I-N junction I-type semiconductor layer, in which amount of inclusion of hydrogen or a halogen element is decreased. CONSTITUTION:On the upper surface of a glass substrate 1, a light transmitting tin oxide conducting film is formed as a first electrode 2. On the upper surface of the electrode, a first P-I-N junction non-single crystal semiconductor 11 comprising the following parts is formed: a P type semiconductor 3, an I-type silicon semiconductor 4 (impurities such as boron and oxygen are less than 1atom% each), to which hydrogen is added, and an N type fine crystal semiconductor 5. A second P-I-N junction non- single crystal semiconductor comprising the following parts is formed on the upper surface of the semiconductor 11: a P type semiconductor 6, an I-type silicon semiconductor 7, to which hydrogen is added, and an N type fine crystal silicon semiconductor 8. The P-I-N-P-I-N junctions are formed. After this process, the light of an extra-high mercury lamp, whose wavelength is higher than 600nm, is cut by a filter. The light having the wavelength of 250-600nm is projected. Then the second P-I-N junction semiconductor has the crystalline property of the N type fine crystal semiconductor. A columnar crystallized layer can be grown in the I-type semiconductor. |
