| 摘要 |
<p>PURPOSE:To realize a nonvolatile memory in which the area of a chip can be reduced and components can be mounted on a circuit board in high density. CONSTITUTION:A memory cell 3 having a capacitor 1 using a ferroelectric film and a MOS transistor 2 is connected to a bit line BL connected to a sense amplifier 30 and a bar BL. Dummy cells 17a, 17b formed of one MOS transistor 171 and a dummy capacitor 170 having 1/2 of the capacity of the capacitor 1 by using a ferroelectric film are connected to the BE,, and similar dummy cells 17c, 17d are connected to the other bar BL. Before data is read, the cells 17a, 17b, 17c, 17d are written, the ferroelectric films of the two capacitors 170 connected to the BL and the bar BL are polarized reversely, polarized charge from the cell 3 is read in the one BL, polarized charges from the cells 17c, 17d are read in the other bar BL, and a potential difference presented in both the BL and the bar BL is read by the amplifier 30.</p> |
