| 摘要 |
<p>PURPOSE:To eliminate a short circuit between layers without spoiling TFT characteristics by providing an organic film between a display electrode corresponding to at least an auxiliary capacity electrode and an insulating layer. CONSTITUTION:An a-Si layer 18, a semiconductor protection film 19 and an N<+> type a-Si layer 20 are formed in order at the intersection of a gate line 12 and a drain line 22 and the intersection of the auxiliary capacity line 14 and the drain line 22. Further, the display electrode 16 consisting of the organic film 17 and ITO is provided on the area of the display electrode 16. This organic film 17 can prevent the short circuit between the layers when provided in an area corresponding to a auxiliary capacity electrode 13. In this case, however, etching is performed by using a display electrode pattern, so the organic film 17 and display electrode 16 are self-aligned. The organic film 17 is formed of an acryl-based material, set to specific viscosity with an organic solvent of 'Ethyl cellosolve(R) acetate, and coated by spin coating.</p> |
