| 摘要 |
PURPOSE:To realize a semiconductor fine wiring, which can be mass-produced, by forming a grating without dividing a crystal because of using oblique etching through dry etching unlike a cleavage method used heretofore so as to enable photolithography to be conducted thereafter. CONSTITUTION:After the growth of a crystal of AlGAs/GaAs multilayered structure 2, dry etching is used to obliquely etch the crystal. Grating 9 is formed when selective etching is conducted on a slope 8 formed at that time, The period of this grating 9 can be accurately controlled by the film thickness of the AlGaAs/GaAs multilayered structure 2 and the angle of inclination of dry etching. |
