发明名称 COMPOSITION FOR THICK-FILM RESISTOR
摘要 PURPOSE: To provide a composition for conductive layer being employed in the production of a resistor element insusceptible to temperature variation and withstanding high temperature high moisture conditions. CONSTITUTION: SnO, SnO2 and a fine powder mixture of metal pentoxide composed of Ta2 O5 and Nb2 O5 is sintered in a nonoxidative atmosphere at 500 deg.C or above to produce Sn2-x <2+> Tay3 Nby2 Sny1 <4+> O7-x-y1 /2 (where, x=0-0.55; y3=0-2; y2=0-2; y1=0-0.5; and y1+y2+y3=2). 5-95wt.% of pyrochlore related compound corresponding to the product is admixed with 95-5wt.% of SnO2 to produce a fine powder mixture. Alternatively, the composition has molar ratio of SnO and metal pentoxide in the range of 1.4-3.0 and SnO2 is excessive stoichiometrically as compared with SnO and metal pentoxide.
申请公布号 JPH0590004(A) 申请公布日期 1993.04.09
申请号 JP19910084247 申请日期 1991.04.16
申请人 E I DU PONT DE NEMOURS & CO 发明人 JIEIKOBU HOOMADARII
分类号 C01G35/00;C01G33/00;C04B35/00;H01B1/06;H01C7/00;H01C17/00;H01C17/06;H01C17/065 主分类号 C01G35/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利