| 摘要 |
PURPOSE:To obtain a semiconductor device having a structure wherein capacitor capacitance is increased without obstructing the high level integration of a stack type semiconductor storage device. CONSTITUTION:The title semiconductor device has a capacitor formed on a semiconductor substrate 1. The capacitor is constituted by using a semiconductor device composed of a continuous capacitor insulating film 11 having a plurality of folds and a first electrode 10 and a second electrode 12 which are in contact with the capacitor insulating film 11 and arranged on both sides thereof. A first spacer film and a second spacer film are stuck in this order on the semiconductor substrate 1. In other case, a plurality of double films wherein the first spacer film and the second spacer film are laminated in this order are stacked. A capacitor is constituted by a manufacturing process for working the films. |
