| 摘要 |
PURPOSE:To ensure the contact area for the active region of a MOS transistor, in a semiconductor integrated circuit constituted of miniaturized MOS transistors. CONSTITUTION:After a gate oxide film 3 and a gate electrode 4 are formed on a P-type semiconductor substrate 1, a first insulating film 7, a second insulating film 8 and a third insulating film 9 are deposited. The third insulating film 9 is selectively eliminated by using a first resist pattern 10 as a mask. After the mask 10 is eliminated, the third insulating film 9, the second insulating film 8 and the first insulating film 7 which are left are etched back until the active region of a transistor is exposed, and a side wall protecting film different in thickness is formed on the side wall of the gate electrode. |
