| 摘要 |
<p>PURPOSE:To obtain an X-ray mask capable of high precision alignment, by forming a patterned thin film of X-ray absorber on an X-ray transmitting film of multilayered film structure which has different refractive indexes and satisfies antireflection conditions for alignment light. CONSTITUTION:In an X-ray mask 5, a patterned thin film 2 of X-ray absorber is formed on an X-ray transmitting thin film 1, which has multilayered film structure 1a, 1b, 1c of different refractive indexes. The X-ray transmitting film 1 has three-layered structure 1a, 1b, 1c, and is constituted so as to satisfy the antireflection conditions for alignment light by making the refractive index of each layer different. Silicon nitride, e.g. is used as the X-ray transmitting film material. The X-ray transmitting film like this has antireflection effect for alignment light, so that high precision alignment is enabled.</p> |
