IRREGULARITY FORMING METHOD FOR POLYCRYSTALLINE SILICON

摘要

PURPOSE: To provide a method for forming ruggedness on a polysilicon surface layer for providing the ruggedness on the storage node plate of a dynamic random access memory and other capacitors. CONSTITUTION: The surface of a wafer is covered with a material for forming a nucleus and a polysilicon small swelling 32 when being deposited on the polysilicon before the polysilicon is deposited. A polysilicon 31 is repeatedly covered with the polysilicon small swelling 32 formed before during deposition and a stable polysilicon structure body with recesses and projections is completed.