| 摘要 |
PURPOSE:To improve the doping efficiency of a P-type dopant Zn, and to stand practical use even at a high growth temperature by bringing the growth rates of each semiconductor layer to a specific value or more. CONSTITUTION:The crystal growth rates of each semiconductor layer are brought to 2.5mum/h or larger. The graph gives the relationship graph of a crystal growth rate and carrier concentration. It shows results obtained in the case where a growth temperature of 720 deg.C and (dimethyl zinc)/(total amount of group III) = constant are used as growth conditions. Accordingly, the doping efficiency of a P-type dopant to a P-type (AlyGa1-1y)0.5In0.5P clad layer is improved by increasing the crystal growth rate, sufficient carrier concentration is obtained even at a high growth temperature ture aiming at the shortening of an oscillation wavelength, and the overall crystal growth time is shortened, and the diffusion of the dopant doped to the P-type clad layer to an active layer can also be reduced.
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