| 摘要 |
PURPOSE:To realize a power field-effect transistor, which is small-sized and easily increases a current capacity. CONSTITUTION:Back gate regions 4 and drain regions 3 are formed in the side of the surface of a semiconductor substrate 1 formed by laminating and forming contact region 2, a source region 5 is formed in the center part of the surface of each back gate region 4 and moreover, a source coupling region 6 is formed in the vertical direction to penetrate from the source contact region 2 to the center parts of the region 4 and the source region 5. An oxide film 7, P-N short-circuit electrodes 10, gate electrodes 8 and drain electrodes 9 are formed on the side of the surface of the substrate 1 and a source electrode 11 is formed on the side of the rear of the substrate 1. The connection between the regions 5 and the source coupling regions 6, which are made to expose on the surface of the substrate 1, is short-circuited by the electrodes 10. The regions 3 are formed on the film 7 in a free and large-area pattern. |
