| 摘要 |
PURPOSE:To obtain a quantum-wire structure element having a structure wherein a quantum wire is produced without being changed by the purity of a GaAs film, by constructing the element so that a potential in relation to a conduction band electron be the minimum at a position in the central part of a well layer. CONSTITUTION:Carriers in the vertical direction are confined by using a double heterostructure which is formed by holding a semiconductor well layer 11 from the opposite surfaces by P-or N-type semiconductor barrier layers 12. On the other hand, carriers in the horizontal direction are confined by a construction wherein the opposite lateral sides of the double heterostructure are held by P-or N-type semiconductor barrier layers 13 between. Electrons supplied from the barrier layers 12 are accumulated on interfaces on the well side between the barrier layers 12 and the well layer 11 and a two-dimensional electron gas is formed. Besides, a potential in the horizontal direction becomes minimum in relation to conduction band electrons in the vicinity of the central parts of the well layer 11 and the barrier layers 12. According to this constitution, a quantum wire structure element having a structure wherein a quantum thin wire is produced without being changed by the purity of a GaAs film can be obtained. |
