| 摘要 |
PURPOSE:To realize large capacity without increasing the term of TAT. CONSTITUTION:The title device is provided with the following; bit lines B1, B2, memory cell selection transistors Q11, Q21, Q12, Q22, and resistance elements R1, R2, R3, R4 which are electrically connected with drains of the memory selection transistors Q11, Q21, Q12, Q22, via contact windows (not shown in figure). The write of a ROM code is performed as follows; division points (a), (b) and (c) where the resistance elements R1, R2, R3 and R4 in memory cells M1, M2, M3 and M4 are divided so as to be resistance values corresponding with the ROM code are electrically connected with a bit line B1 or B2 via contact windows (not shown in figure). |
