| 摘要 |
PURPOSE:To suppress the light feedback by the reflection at the end face of an active layer by equipping it with a p-type active layer, which performs amplification by induced discharge, a p-type clad layer smaller in refractive index than the p-type active layer, an n-type clad layer, an n-type layer, and an n-type substrate, and providing a light diffusion face inclined to the active layer at the side end face of a nonexcitation area. CONSTITUTION:An n-type clad layer 5, a p-type active layer 4, a p-type clad layer 3, and an n-type layer 2 are formed in order on a GaAs n-type substrate 6 by epitaxially growing GaAs. But, in the case of having defined that n1 is the refractive index of the p-type active layer 4 and that n2 is the refractive index of the p-type clad layer 3 and the n-type clad layer 5, n1>n2. A stripe- shaped current narrowing passage 8 and a nonexcitation area 9 are made by the diffusion of Zn, or the like. Next, a p electrode 1 and an n electrode 7 are made. For formation of a light diffusion face 12, a stripe-shaped resist pattern is made in the direction orthogonal to the longitudinal direction of the current narrowing passage 8, at the end face of the nonexcitation area 9. |
