| 发明名称 |
VERFAHREN ZUR AUSBILDUNG EINER KUPFER ENTHALTENDEN METALLISIERUNGSSCHICHT AUF DER OBERFLAECHE EINES HALBLEITERBAUELEMENTES. |
| 摘要 |
A method of producing a semiconductor device comprises the steps of forming a metallization film (18) including copper on a surface of a substrate (10,12,14,16), and depositing an insulating film (20) on the surface including the metallization film at a temperature which is lower than an oxidation temperature of copper. |
| 申请公布号 |
DE3782904(T2) |
申请公布日期 |
1993.04.08 |
| 申请号 |
DE19873782904T |
申请日期 |
1987.09.11 |
| 申请人 |
FUJITSU LTD., KAWASAKI, KANAGAWA, JP |
发明人 |
HOSHINO, KAZUHIRO, MEGURO-KU TOKYO, 153, US |
| 分类号 |
H01L21/31;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/90 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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