HALBLEITERSPEICHER MIT EINER SIGNALWECHSEL-ERKENNUNGSSCHALTUNG.

摘要

The cells of a semiconductor memory (1) connected to a writing circuit (7) and a reading amplifier (6) has a preloading circuit (9) at its input side, which can be activated to charge the data lines to a predetermined level. A signal changeover recognition circuit (24) deactivates the preloading circuit on changeover and after a time delay the preloading circuit is deactivated. A clock pulse generator (26) provides the activating signal. When the address signal changes, the clock pulse generator alters the signal level so that the preloading circuit is deactivated. The reading amplifier is connected to a control circuit (28) so that when an output signal is generated, the clock pulse signal is altered and the precharging circuit is again activated.