Vertical DMOS transistor with compact geometry - has source terminal connected to source region via self-adjusting contact to gate and source region

摘要

The DMOS transistor in a semiconductor substrate consists of a highly doped Drain area (1) of a first conductivity type, an overlying doped area (2) of the same type, and a doped Zone (3) of a second conductivity type located within the area (2) extending to the semiconductor surface (11). The transistor also includes a Gate electrode (6) insulated from the semiconductor substrate by a Gate oxide layer (7), a silicide Source area (10) and a Source electrode (9). The source electrode substantially covers the source region, which is self adjusting in the process. ADVANTAGE - Increased circuit density, higher reliability, reduced ON-resistance, reduced number of fabrication steps, reduced secondary breakdown.