| 摘要 |
In a semiconductor device wherein a bonding pad (22 or 23) is formed on an electrode (17-1 to 17-8, or 18-1 to 18-8) through an insulating interlayer (19) and a bonding wire (25 or 26) is bonded to the bonding pad (22 or 23) by thermocompression bonding, a through hole (21-1 to 21-4, or 20-1 to 20-3) for connecting the bonding pad (23 or 22) and the electrode (17-4 to 17-7, or 18-1 to 18-3) is formed in the insulating interlayer (19) above a contact hole (15-1 to 15-7, or 16-1 to 16-8) for connecting the electrode (17-1 to 17-8, or 18-1 to 18-8) and an active region (13-1 to 13-7, or 12) formed in a semiconductor substrate (11). Metal columns of members of the electrode (17-4 to 17-7, or 18-1 to 18-3) filled in the contact hole (15-4 to 15-7, or 16-1 to 16-3) and members of the bonding pad (23 or 22) filled in the through hole (20-1 to 20-3, or 21-1 to 21-4) are formed under the bonding pad (23 or 22). |
