发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The semiconductor device of the present invention includes a semiconductor substrate on which are formed semiconductor elements, and a plurality of wiring layers formed on the semiconductor substrate via porous insulating films. The surface of the plurality of the wiring layers is preferably covered with a compact insulating film. The size of the pores in the porous insulating film is preferably 5 nm to 50 nm in diameter, and the volume of the pores in the porous insulating film is preferably 50% to 80% of the total volume of the porous insulating film. The porous insulating film is formed by subjecting a mixed insulating film of a basic oxide and an acidic oxide to a heat treatment to precipitate only either one of the basic oxide and the acidic oxide, and then dissolving out selectively the basic or acidic oxide precipitated. |
申请公布号 |
KR930002670(B1) |
申请公布日期 |
1993.04.07 |
申请号 |
KR19890003038 |
申请日期 |
1989.03.13 |
申请人 |
NIPPON ELECTRIC CO., LTD. |
发明人 |
SAKAMOTO, MITSURU;HAMANO, KUNIYUKI |
分类号 |
H01L21/31;H01L21/312;H01L21/316;H01L21/768;H01L23/522;H01L23/532;H05K1/00;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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