发明名称 Null consumption, nonvolatile programmable switch.
摘要 <p>A null consumption CMOS switch which may be set by nonvolatile programming is formed by a pair of complementary transistors having a common drain and a common gate, which may be a unitary floating gate structure shared with a programmable and erasable, nonvolatile memory cell. The state of charge of the floating gate, imposed by programming or erasing, may be such as to reach advantageously a potential higher than the supply voltage or lower than the ground potential of the circuit. The floating gate directly drives the ON or OFF states of the two complementary transistors. On the output node represented by the common drain of the pair of transistors a signal present on a source node of one or the other of the two complementary transistors may be replicated. Different embodiments as a polarity selection, a path selector and a TRISTATE selector are described. &lt;IMAGE&gt;</p>
申请公布号 EP0536094(A2) 申请公布日期 1993.04.07
申请号 EP19920830522 申请日期 1992.09.24
申请人 SGS-THOMSON MICROELECTRONICS S.R.L. 发明人 DANIELE, VINCENZO;BENEDETTI, MIRELLA
分类号 H03K17/687;G11C17/00;G11C16/02;H03K17/00;H03K17/62;H03K17/693 主分类号 H03K17/687
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