| 摘要 |
PURPOSE:To enable a fine bonding wire to be protected against disconnection caused by thermal effect and enhanced follow-up properties to a high speed bonder by a method wherein the fine wire is set smaller than a certain value in average crystal grain diameter within a distance of 50mum or below from just a neck when a ball is provided to the fine wire of gold or gold alloy through spar king. CONSTITUTION:A fine wire of gold or gold alloy is set smaller than 10mum in average crystal grain diameter within a distance of 50mum or below from just a neck when a ball is provided to the fine wire of gold or gold alloy through sparking Furthermore, the fine wire is rendered over 500kg/cm<2> in breaking strength at a temperature of 25 deg.C and over 400kg/cm<2> in breaking strength at a temperature of 250 deg.C, and set to over 7% and less than 10% in breaking extension. Material is melted, cast, rolled, and drawn into a gold fine wire or an alloy fine wire, which is annealed for the formation of a semiconductor device bonding wire, where a wire drawing work is carried out in water kept at a temperature of 10 deg.C or below. Furthermore, an annealing process is continuously executed. |
