| 摘要 |
<p>PURPOSE:To actualize the title modified energy beam local processing method and device thereof capable of easily controlling the reactivity. CONSTITUTION:When e.g. an Al wiring layer 4 beneath the SiO2 protective film 3 of an LSI is processed by the beam local etching step, a mixed gas of Cl2 and SiCl4 is used as an etching gas to be fed simultaneously with the ion beams 1 irradiation step. The side etching step in specific level can be intentionally performed at the Cl2 mixing ratio of 20% while on the contrary, the side etching step can be prevented at the Cl2 mixing ratio of 3%. At this time, either electron beams or laser beams may be substituted for the ion beams 1. Through these procedures, the mixing ratio of a spontaneously reacting gas with the other processing gas can be controlled to be fed for performing the energy beam local etching step thereby enabling the beam local etching reactivity to be controlled easily and without fail.</p> |
