| 摘要 |
PURPOSE:To reduce a process unevenness within a wafer, which is generated by the floe of an etching stirring solution, by a method wherein a multitude of barrier mesas, which are formed into the same form as that of an element, a triangle having a side of a degree identical with one side of the element and other plane forms, are provided in close vicinity to the peripheral; edge of a prescribed region. CONSTITUTION:An element and a photoresist mask for barrier mesas are simultaneously formed on a wafer 1 for GaAs light-emitting device use. The element is etched, an element mesa 2 is formed and such the barrier mesas 3 as to become an obstacle to an etching liquid are formed on the outside of the mesa 2. These barrier mesas 3 are formed in such a way that they are formed into the same from as that of the element, a triangle having a side of a degree identical with one side of the element and other plane forms. After that, a mask 6 consisting of a photoresist is formed and an insulating film 7 at an electrode part is etched. At this tie, as the barrier mesas exist, the floe of the etching liquid is changed and an etching unevenness is not generated. |
