| 摘要 |
PURPOSE:To execute a calculating of three-dimensional impurity concentration at a high speed, and to obtain three-dimensional impurity concentration map of high accuracy adapted to a manufacturing process of an actual semiconductor device. CONSTITUTION:By deriving a weight function for showing a ratio of a one- dimensional impurity concentration distribution given onto a vertical axis 1 against the surface of a semiconductor device and a one-dimensional impurity concentration distribution in a point separated from the vertical axis 1, the one-dimensional impurity concentration distribution given onto the vertical axis 1 and the weight function are integrated by setting a two-dimensional mask shape on the surface of the semiconductor device as an integral range, a three-dimensional impurity concentration distribution C1(z) of the inside of the semiconductor device is calculated. |
