| 摘要 |
PURPOSE:To provide a forming method of patterns by which patterns can be selectively formed with a positive photosensitive resist and a negative photosensitive resist on a desired substrate without an error in relative positions. CONSTITUTION:A positive photosensitive resist 2 in the area where the pattern is to be formed with a negative photosensitive resist is preliminarily removed in the process of coating, exposing and developing, and then the negative photosensitive resist 5 is applied thereon and subjected to back etching with a developer. Then these resists are properly patterned by exposing and developed, so that desired patterns of the positive resist and the negative resist can be formed at one time. Thus, the substrate can be selectively coated with both of the positive and negative photosensitive resists. Moreover, pattern exposure and development can be performed once so that the relative displacement of both resist patterns can be avoided and the patterns can be formed with both of the resists. |
