| 摘要 |
PURPOSE:To obtain an ultrahigh-efficiency solar cell element which dissolves the increment of series resistance by specifying the charge density of an electron attractive layer, the bore of a through-hole, and the pitch between holes. CONSTITUTION:An n<+>-region 3 and a p<+>-region 4 are made on a p-type single crystal silicon substrate 1 by thermal diffusion method, and a positive electrode 5 and a negative electrode 6 are made by deposition method using aluminum, etc. Moreover, a passivation layer 7 consisting of a silicon oxide film, etc., is made on the surface of the silicon substrate 1 and in a through-hole 2 by thermal oxidation method, etc., so as to prevent the recoupling of carriers. The charge density of the electron attractive layer 8 is 3X10<11>-2X10<13>cm<-2>, and besides the bore of the through-hole is 5-50mum, and the pitch between the holes is 10-200mum. The drop of the conversion efficiency accompanying the drop of condensing area can be prevented. |
