| 摘要 |
PURPOSE: To make it possible to form desired patterns on a wafer from a mask or reticle by disposing a stage for adjusting the mask data or reticle data of an original for the purpose of correcting an expected difference in mold sizes between a mold belonging to the density patterns on a surface to be subjected to the influence of a proximity effect and a mode parted therefrom. CONSTITUTION: This method is provided with the adjusting stage for effectively subjecting the reticle data used for forming the reticle patterns to correction of the proximity effect induced by the diffraction of the light by the opaque parts of the reticle patterns, by which the correction is executed. For example, the original density patterns consisting of opaque parts 72a, 74a and 76a are held as they are but the patterns of the parted parts are corrected and the opaque parts 78 are made narrower than the corresponding parts 78. The exposure patterns on a wafer are made into the desired patterns which are equal in the molds within the density patterns formed on the wafer and the parted molds and have the expected characteristics by such correction of the reticle patterns 72a, 74a, 76a, 78a. |
