发明名称 PRODUCTION OF MASK
摘要 PURPOSE:To form phase shifter patterns by controlling the thickness of phase shifter films to an optimum value without fluctuating the thickness of the phase shifter films on a substrate by the ruggedness of the substrate. CONSTITUTION:This production process includes a stage 1 for forming a light shielding film having prescribed light shielding patterns on the substrate, a sage 2 for forming a film layer consisting of a radiation sensitive material on the substrate, a sage 3 for determining the irradiation quantity of active chemical rays in such a manner that the film thickness of the patterns is kept constant within transmission patterns regardless of the kinds of the transmission patterns in accordance with the information on the coating film thickness of the radiation sensitive material with respect to the kinds of the transmission patterns, a stage 4 for irradiating the surface of the film layer to the prescribed pattern shape by using inadiation quantity, and a stage 5 for forming the prescribed shifter patterns by developing the film layer.
申请公布号 JPH0580489(A) 申请公布日期 1993.04.02
申请号 JP19910239240 申请日期 1991.09.19
申请人 HITACHI LTD 发明人 IMAI AKIRA
分类号 G03F1/30;G03F1/68;H01L21/027 主分类号 G03F1/30
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