INTEGRATED DYNAMIC SEMICONDUCTOR MEMORY CIRCUIT OF THE COMPLEMENTARY CIRCUIT TECHNIQUE,申请号HK19930000283-传众专利搜索

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发明名称	INTEGRATED DYNAMIC SEMICONDUCTOR MEMORY CIRCUIT OF THE COMPLEMENTARY CIRCUIT TECHNIQUE
摘要
申请公布号	HK28393(A)	申请公布日期	1993.04.02
申请号	HK19930000283	申请日期	1993.03.25
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	SCHUETZ, ALFRED, DR.-ING.;MUELLER, WOLFGANG, DR.-ING.;SOUTSCHEK, EWALD, DR.-ING.
分类号	G11C11/407;G11C11/408;(IPC1-7):G11C11/408;G11C11/24	主分类号	G11C11/407
代理机构		代理人
主权项
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