| 摘要 |
PURPOSE: To obtain a DRAM having integration density of 16Mbit or above. CONSTITUTION: A trench is made in an isolation region IR, a field oxide 22 is deposited on the U-shaped inner surface of the trench, the capacitor of a memory cell is formed along the side wall of the field oxide 22 and a word line 24 is formed before and after forming the capacitor. According to the structure, isolation region can be reduced and a cell capacitor required for a DRAM of 16Mbit or above can be ensured. Furthermore, topography is enhanced in the direction of bit line by burying the cell capacitor in the trench. |
