| 摘要 |
PURPOSE:To reduce the variation of a film thickness caused by changes in viscosity of a liquid chemical on a wafer by providing a liquid chemical discharge nozzle provided above the rotational center of the wafer and another liquid chemical discharge nozzle provided above the wafer at a position deviated from the rotational center. CONSTITUTION:A first liquid chemical discharge nozzle 3 is provided above the rotational center of a wafer 2 rotated by means of a spin chuck 1 and a second liquid chemical discharge nozzle 4 is provided above the wafer 2 at a position deviated from the rotational center in its radial direction. The nozzles 3 and 4 are connected to a liquid chemical pump. Then a spin coat film is formed on the wafer 2 by dropping a liquid chemical onto the wafer from the nozzles 3 and 4 while the wafer 2 is rotated at a low rotating speed of about 500rpm and shaking off the liquid chemical by rotating the wafer 2 at an arbitrary rotating speed. Therefore, the variation of the film thickness of the spin coat film on the surface of the wafer 2 can be suppressed to about several tens of Angstrom . |
