发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent the breaking of the chip by cutting a groove having a required depth from the surface of a substrate, performing etching to the groove from the bottom surface, and dividing the chip. CONSTITUTION:A groove 4 is provided in an Si wafer 1 by using a dicer, the wafer 1 is stuck to a glass plate 2, and the bottom surface is etched by a bubble etching device. HNO3-HF and the like are used as etching liquid. While the etching is continuing, the groove 4 appears. At this time, the etching is stopped and the washing is performed by water. Since the etching may be stopped when the groove is recogvized, the time to stop the etching is readily acknowledged, and the breaking of the chip and the like are not caused.</p>
申请公布号 JPS5632730(A) 申请公布日期 1981.04.02
申请号 JP19790108954 申请日期 1979.08.27
申请人 FUJITSU LTD 发明人 SAITOU MASAO;SAKURADA KAZUO
分类号 H01L21/301;H01L21/306 主分类号 H01L21/301
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