| 摘要 |
PURPOSE:To provide a method for forming fine patterns by which multiple exposure can be performed with an ordinary wafer stepper available on the market without forming any base pattern and without producing any positional deviation. CONSTITUTION:After a resist 5 is applied to the surface of a wafer 1 without forming any base pattern and the resist 5 is exposed by using a pattern for multiple exposure, the resist 5 is subjected to multiple exposure by using the latent images 5a and 5b of the resist 5 formed by bleaching caused by the first exposure as the pattern for positioning a mask 6 for multiple exposure to be used thereafter. Therefore, the man-hour can be remarkably reduced, because no base pattern is required, and the error conventionally produced between a mask for base pattern and the mask 6 for multiple exposure can be eliminated, because the mask for base pattern is not required. Consequently, the multiple exposure can be performed without pattern deviation. |
