| 摘要 |
PURPOSE:To enhance oscillator strength optical transition and increase light emittion intensity by forming a superlattice structure of an indirect transition compound semiconductor capable of changing to a direct transition on a semiconductor substrate with (111) plane. CONSTITUTION:A super lattice structure consisting of a GaP/AlP layer is formed on a GaP substrate 6 with (111) B plane by an organometallic pyrolysis vapor growth method. First, a GaP buffer layer 7 is grown, and then a GaP layer 8 and an AlP layer 9 are epitaxially grown alternately. In this case, PH3 is supplied in a crystal growth chamber in a constant amount, and supply of TEGa and TMAl whose flow rate is predetermined is alternately repeated by a gas manifold. Finally, a GaP cap layer 10 is grown. As a result, an oscillator strength in optical transition increases, and a light emitting strength, which is fully practicable on a wavelength band that cannot be obtained before, can be attained. |
